Selective epitaxial growth has been used to produce electronically isolated devices. The oxide/silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a large portion of the defects were due to thermal expansion mismatch and can be avoided.
- Oxide/silicon interfaces
- thermal expansion mismatch
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Electrical and Electronic Engineering