Microstructural examination of extended crystal defects in silicon selective epitaxial growth

H. Yen, E. P. Kvam, Rashid Bashir, G. W. Neudeck

Research output: Contribution to journalArticle

Abstract

Selective epitaxial growth has been used to produce electronically isolated devices. The oxide/silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a large portion of the defects were due to thermal expansion mismatch and can be avoided.

Original languageEnglish (US)
Pages (from-to)1331-1339
Number of pages9
JournalJournal of Electronic Materials
Volume22
Issue number11
DOIs
StatePublished - Nov 1 1993
Externally publishedYes

Keywords

  • Oxide/silicon interfaces
  • TEM
  • thermal expansion mismatch

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Microstructural examination of extended crystal defects in silicon selective epitaxial growth'. Together they form a unique fingerprint.

  • Cite this