Microscopic description of light induced defects in amorphous silicon solar cells

Lucas K. Wagner, Jeffrey C. Grossman

Research output: Contribution to journalArticlepeer-review


Using a combination of quantum and classical computational approaches, we model the electronic structure in amorphous silicon in order to gain an understanding of the microscopic atomic configurations responsible for light-induced degradation of solar cells. We demonstrate that regions of strained silicon bonds could be as important as dangling bonds for creating traps for charge carriers. Further, our results show that defects are preferentially formed when a region in the amorphous silicon contains both a hole and a light-induced excitation. These results are consistent with the puzzling dependencies on temperature, time, and pressure observed experimentally.

Original languageEnglish (US)
Article number265501
JournalPhysical review letters
Issue number26
StatePublished - Dec 22 2008
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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