A study was performed on micron-scale buckling of SiO2 films on Si. The silicon substrates was melted by the pulsed laser irradiation of the oxidized surface while maintaining the rigidity of the oxide film. The buckling was studied using atomic force microscopy. It was found that the measured wavelength of the buckling of 0.8 μm for 25 nm films and 1.6 μm for 50 nm films is in good agreement with theory.
ASJC Scopus subject areas
- Physics and Astronomy(all)