Microkinetic model for reaction and diffusion of titanium interstitial atoms near a TiO2(110) surface

Kandis Leslie Gilliard-Abdulaziz, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

Semiconductor surfaces provide efficient pathways for injecting native point defects into the underlying bulk. In the case of interstitial atoms in rutile, the TiO2(110) surface exemplifies this behavior, although extended defects in the bulk such as platelets and crystallographic shear planes act as net sources or sinks depending upon specific conditions. The present work constructs a quantitative microkinetic model to describe diffusion and based upon isotopic gas-solid exchange experiments. Key activation barriers for are 0.55 eV for surface injection, 0.50 eV for site-to-site hopping diffusion, and 3.3 eV for dissociation of titanium interstitials from extended defects.

Original languageEnglish (US)
Pages (from-to)4587-4596
Number of pages10
JournalPhysical Chemistry Chemical Physics
Volume20
Issue number6
DOIs
StatePublished - Jan 1 2018

Fingerprint

Titanium
interstitials
titanium
Atoms
atoms
Defects
defects
Point defects
Platelets
platelets
sinks
rutile
point defects
Ion exchange
Gases
Chemical activation
activation
dissociation
injection
Semiconductor materials

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Microkinetic model for reaction and diffusion of titanium interstitial atoms near a TiO2(110) surface. / Gilliard-Abdulaziz, Kandis Leslie; Seebauer, Edmund G.

In: Physical Chemistry Chemical Physics, Vol. 20, No. 6, 01.01.2018, p. 4587-4596.

Research output: Contribution to journalArticle

@article{f9b1f2d5ef674b12a880b8c7e3eefe23,
title = "Microkinetic model for reaction and diffusion of titanium interstitial atoms near a TiO2(110) surface",
abstract = "Semiconductor surfaces provide efficient pathways for injecting native point defects into the underlying bulk. In the case of interstitial atoms in rutile, the TiO2(110) surface exemplifies this behavior, although extended defects in the bulk such as platelets and crystallographic shear planes act as net sources or sinks depending upon specific conditions. The present work constructs a quantitative microkinetic model to describe diffusion and based upon isotopic gas-solid exchange experiments. Key activation barriers for are 0.55 eV for surface injection, 0.50 eV for site-to-site hopping diffusion, and 3.3 eV for dissociation of titanium interstitials from extended defects.",
author = "Gilliard-Abdulaziz, {Kandis Leslie} and Seebauer, {Edmund G.}",
year = "2018",
month = "1",
day = "1",
doi = "10.1039/c7cp07802a",
language = "English (US)",
volume = "20",
pages = "4587--4596",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "6",

}

TY - JOUR

T1 - Microkinetic model for reaction and diffusion of titanium interstitial atoms near a TiO2(110) surface

AU - Gilliard-Abdulaziz, Kandis Leslie

AU - Seebauer, Edmund G.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Semiconductor surfaces provide efficient pathways for injecting native point defects into the underlying bulk. In the case of interstitial atoms in rutile, the TiO2(110) surface exemplifies this behavior, although extended defects in the bulk such as platelets and crystallographic shear planes act as net sources or sinks depending upon specific conditions. The present work constructs a quantitative microkinetic model to describe diffusion and based upon isotopic gas-solid exchange experiments. Key activation barriers for are 0.55 eV for surface injection, 0.50 eV for site-to-site hopping diffusion, and 3.3 eV for dissociation of titanium interstitials from extended defects.

AB - Semiconductor surfaces provide efficient pathways for injecting native point defects into the underlying bulk. In the case of interstitial atoms in rutile, the TiO2(110) surface exemplifies this behavior, although extended defects in the bulk such as platelets and crystallographic shear planes act as net sources or sinks depending upon specific conditions. The present work constructs a quantitative microkinetic model to describe diffusion and based upon isotopic gas-solid exchange experiments. Key activation barriers for are 0.55 eV for surface injection, 0.50 eV for site-to-site hopping diffusion, and 3.3 eV for dissociation of titanium interstitials from extended defects.

UR - http://www.scopus.com/inward/record.url?scp=85041838132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041838132&partnerID=8YFLogxK

U2 - 10.1039/c7cp07802a

DO - 10.1039/c7cp07802a

M3 - Article

AN - SCOPUS:85041838132

VL - 20

SP - 4587

EP - 4596

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 6

ER -