Microdischarge devices with 10 or 30 μm square silicon cathode cavities: Pd scaling and production of the XeO excimer

S. J. Park, J. G. Eden, J. Chen, C. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon microplasma devices with square trench cathode cavities having cross sections of (10 μm) 2 or (30 μm) 2 and a depth of 200 μm have been fabricated and operated successfully in the rare gases and Xe O2 mixtures at pressures (300 K) up to 1100 Torr. The (10 μm) 2 structures exhibit electrical characteristics that contrast with the behavior of larger devices and may indicate the onset of the breakdown of pd scaling. Also, a distinct minimum in the ignition voltage of 10 μm square devices is observed for pd≃0.9 Torr cm (p and d are the Ne gas pressure and microcavity cross-sectional dimension, respectively). Strong emission on the 2 +1 →1 +1 transition of XeO in the green (~510-560 nm) is observed in mixtures of Xe (300-700 Torr) and O2 (1-10 mTorr).

Original languageEnglish (US)
Pages (from-to)4869-4871
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number21
DOIs
StatePublished - Nov 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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