Microcrystalline silicon by DC magnetron sputtering: Growth mechanisms

G. F. Feng, M. Katiyar, Y. H. Yang, John R Abelson, N. Maley

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have used real-time, in situ spectroscopic ellipsometry (SE) and infrared reflectance (IR) to study microcrystalline silicon (μc-Si) formation in reactive magnetron sputtering (RMS). μc-Si growth occurs at high hydrogen partial pressures and moderate substrate temperatures. We use IR studies and SE studies of film growth on rough surfaces, respectively, to show that these conditions lead to high hydrogen coverage of the film surface and high effective surface diffusivity. The interface region is amorphous and its thickness decreases with deposition rate. For a fixed growth flux, we observe a 30% decrease in the deposition rate of μc-Si relative to the amorphous interface region. This could be due to increased etching or decreased sticking coefficients during microcrystalline growth.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558991786
StatePublished - 1993
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Microcrystalline silicon by DC magnetron sputtering: Growth mechanisms'. Together they form a unique fingerprint.

Cite this