This paper reports a heated atomic force microscope cantilever having a Schottky diode fabricated near the cantilever free end. The forward bias and reverse bias operation of this cantilever offer different current-voltage characteristics, such that the cantilever heating and temperature sensing capabilities are different in forward bias versus reverse bias operation. When 43 V is applied to the cantilever, the cantilever temperature is 677 °C in the forward bias and 786 °C in reverse bias. Thermal runaway for the device occurs at 445 °C, corresponding to forward and reverse bias resistances of 1.2 kΩ and 2.0 kΩ. Below the thermal runaway point, the cantilever temperature coefficient of resistance (TCR) is 943 ppm/°C in the forward bias and 2996 ppm/°C in reverse bias. We characterize cantilever thermomechanical bending, which is a function of bias direction, applied voltage, and actuation frequency. The diode junction at the cantilever free end grants an additional degree of electro-thermal and thermomechanical control compared to other types of heated cantilevers.

Original languageEnglish (US)
Pages (from-to)351-357
Number of pages7
JournalSensors and Actuators, A: Physical
Issue number2
StatePublished - Aug 10 2011


  • Atomic force microscope (AFM)
  • Electro-thermal
  • Microfabrication
  • Schottky diode
  • Thermomechanical

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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