Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

Michael Hattendorf, Dennis Scott, Qinghong Yang, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

This letter presents a novel small-signal model extraction procedure which determines intrinsic and extrinsic base-collector capacitance (Cbci and Cbcx, respectively) directly from S-parameter data. The procedure utilizes physical assumptions about the bias dependence of small-signal parameters. The model is validated on several InGaP/GaAs HBTs with different layouts, and the extraction results are discussed. The small-signal model is physical, produces excellent S-parameter fits, and may be used to derive a compact large-signal model.

Original languageEnglish (US)
Pages (from-to)116-118
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number3
DOIs
StatePublished - Mar 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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