This letter presents a novel small-signal model extraction procedure which determines intrinsic and extrinsic base-collector capacitance (Cbci and Cbcx, respectively) directly from S-parameter data. The procedure utilizes physical assumptions about the bias dependence of small-signal parameters. The model is validated on several InGaP/GaAs HBTs with different layouts, and the extraction results are discussed. The small-signal model is physical, produces excellent S-parameter fits, and may be used to derive a compact large-signal model.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering