Method of making semiconductor devices and techniques for controlled optical confinement

Nick Holonyak (Inventor), Stephen J Caracci (Inventor), Fred A Kish (Inventor)

Research output: Patent

Abstract

The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.
Original languageEnglish (US)
U.S. patent number5403775
Filing date6/15/94
StatePublished - Apr 4 1995

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