Method of forming an array of high aspect ratio semiconductor nanostructures

Winston Chern (Inventor), Keng Hao Hsu (Inventor), Nicholas X Fang (Inventor), Xiuling Li (Inventor), Ik Su Chun (Inventor), Placid M Ferreira (Inventor)

Research output: Patent

Abstract

A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.
Original languageEnglish (US)
U.S. patent number8980656
Filing date10/14/10
StatePublished - Mar 17 2015

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