TY - PAT
T1 - Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
AU - Holonyak, Nick
AU - Maranowski, Steven A
AU - Kish, Fred A
N1 - This invention was made with Government support under DAAL03-92-G-0264 awarded by the Department of the Army, and ECD 89-43166 and DMR 89-20538 awarded by the National Science Foundation. The Government has certain rights in this invention.
PY - 1996/8/27
Y1 - 1996/8/27
N2 - By implementing oxidation to obtain a native oxide of aluminum (581,582) after a device has been metallized (505,565), advantages can be obtained in device operation, reliability, and life. A method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-beating III-V semiconductor material (530,550); applying metal electrodes (505,565) to the structure to form a medalist semiconductor structure; and heating the medalist structure in a water-containing environment to convert a portion of the aluminum-bearing III-V semiconductor material to a native oxide of aluminum (581,582).
AB - By implementing oxidation to obtain a native oxide of aluminum (581,582) after a device has been metallized (505,565), advantages can be obtained in device operation, reliability, and life. A method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-beating III-V semiconductor material (530,550); applying metal electrodes (505,565) to the structure to form a medalist semiconductor structure; and heating the medalist structure in a water-containing environment to convert a portion of the aluminum-bearing III-V semiconductor material to a native oxide of aluminum (581,582).
M3 - Patent
M1 - 5550081
Y2 - 1995/03/31
ER -