Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment

By implementing oxidation to obtain a native oxide of aluminum (581,582) after a device has been metallized (505,565), advantages can be obtained in device operation, reliability, and life. A method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-beating III-V semiconductor material (530,550); applying metal electrodes (505,565) to the structure to form a medalist semiconductor structure; and heating the medalist structure in a water-containing environment to convert a portion of the aluminum-bearing III-V semiconductor material to a native oxide of aluminum (581,582).