Method for producing integrated semiconductor light emitter

Nick Holonyak (Inventor), Wyn D Laidig (Inventor), James J Coleman (Inventor)

Research output: Patent


A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
Original languageEnglish (US)
U.S. patent number4378255
Filing date5/6/81
StatePublished - Mar 29 1983


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