Abstract
A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
| Original language | English (US) |
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| U.S. patent number | 4378255 |
| Filing date | 5/6/81 |
| State | Published - Mar 29 1983 |