Method for producing integrated semiconductor light emitter

Nick Holonyak, Jr. (Inventor), Wyn D Laidig (Inventor)

Research output: Patent

Abstract

A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
Original languageEnglish (US)
U.S. patent number4378255
StatePublished - Mar 29 1983

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