A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
|Original language||English (US)|
|U.S. patent number||4378255|
|State||Published - Mar 29 1983|