Method For Making Aluminum Gallium Arsenide Semiconductor Device With Native Oxide Layer

Nick Holonyak; John Michael Dallesasse

Method For Making Aluminum Gallium Arsenide Semiconductor Device With Native Oxide Layer

Nick Holonyak (Inventor)
, John Michael Dallesasse (Inventor)

Research output: Patent

Abstract

A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Original language	English (US)
U.S. patent number	5696023
Filing date	6/7/95
State	Published - Dec 9 1997

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title = "Method For Making Aluminum Gallium Arsenide Semiconductor Device With Native Oxide Layer",

abstract = "A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.",

author = "Nick Holonyak and Dallesasse, \{John Michael\}",

note = "This invention was made, in part, with Government support under contract DAAL 03 89-K-0008 awarded by the United States Army and Grants NSF ECD 89-43166 and NSF DMR 89-20538 awarded by the National Science Foundation. The Government has certain rights in the invention. ; 5696023",

year = "1997",

month = dec,

day = "9",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Method For Making Aluminum Gallium Arsenide Semiconductor Device With Native Oxide Layer

AU - Holonyak, Nick

AU - Dallesasse, John Michael

N1 - This invention was made, in part, with Government support under contract DAAL 03 89-K-0008 awarded by the United States Army and Grants NSF ECD 89-43166 and NSF DMR 89-20538 awarded by the National Science Foundation. The Government has certain rights in the invention.

PY - 1997/12/9

Y1 - 1997/12/9

N2 - A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

AB - A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

M3 - Patent

M1 - 5696023

Y2 - 1995/06/07

ER -

Method For Making Aluminum Gallium Arsenide Semiconductor Device With Native Oxide Layer

Abstract

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