Method For Making Aluminum Gallium Arsenide Semiconductor Device With Native Oxide Layer

Nick Holonyak (Inventor), John Michael Dallesasse (Inventor)

Research output: Patent

Abstract

A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
Original languageEnglish (US)
U.S. patent number5696023
StatePublished - Dec 9 1997

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