A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a channel region connected multiply with multiplicity of n (n.gtoreq.3) and having (n-1)-fold rotational symmetry around an axis of the channel region; a gate electrode surrounding a side wall of the channel region; and source and drain electrodes electrically connected to one and another end of the channel region along the axis. Electrons move in an effective channel region along or around the axis from the source toward the drain. Electron interference in the effective channel region is controlled by a magnetic field applied in the axis direction and/or the gate electrode.
|Original language||English (US)|
|U.S. patent number||5908306|
|State||Published - Jun 1 1999|