Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies

Ivan G. Petrov (Inventor), Chong Wee Lim (Inventor), Kenji Ohmori (Inventor), Joseph E Greene (Inventor)

Research output: Patent

Abstract

A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.
Original languageEnglish (US)
U.S. patent number6762131
Filing date4/13/02
StatePublished - Jul 13 2004

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