Abstract
A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
| Original language | English (US) |
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| U.S. patent number | 7998807 |
| Filing date | 6/4/04 |
| State | Published - Aug 16 2011 |