Abstract
A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
Original language | English (US) |
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U.S. patent number | 6797598 |
Filing date | 8/22/02 |
State | Published - Sep 28 2004 |