Method for forming an epitaxial cobalt silicide layer on MOS devices

Daniel Gall (Inventor), Ivan G. Petrov (Inventor), Joseph E Greene (Inventor), Chong Wee Lim (Inventor), Chan Soo Shin (Inventor)

Research output: Patent

Abstract

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
Original languageEnglish (US)
U.S. patent number6797598
Filing date8/22/02
StatePublished - Sep 28 2004

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