Method and system for increasing radiation sensitivity in semiconductor detectors

Shiva Abbaszadeh (Inventor), Garry Chinn (Inventor), Craig Levin (Inventor)

Research output: Patent

Abstract

Measuring in a first semiconductor crystal two anode channels and two cathode channels and measuring in a second semiconductor crystal one anode channel and one cathode channel; responsive to an energy of a sum of the two anode channels being within an energy window and an energy of the one anode channel being within the energy window: separating the two anode channels and the two cathode channels into combinations of anode-cathode channel pairs; for each of the anode-cathode channel pairs, determining a respective direction difference angle, each respective direction difference angle being determined via use of the one anode channel and one cathode channel; determining a determined one of the direction difference angles that has a smallest value; and setting as an initial interaction position of a photon a selected one of the anode-cathode channel pairs that corresponds to the determined direction difference angle. Additional embodiments are disclosed.
Original languageEnglish (US)
U.S. patent number11029427
StatePublished - Jun 8 2021

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