TY - JOUR
T1 - Metamorphosis of the transistor into a laser
AU - Feng, M.
AU - Holonyak, N.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Based on the invention and operation of the transistor, the alloy diode laser, the quantum-well diode laser and the high-speed heterojunction bipolar transistor (HBT), we have invented and realized now a transistor laser (TL). The transistor laser is a three-terminal technology providing coupling and the coherent light emission in the transistor. The quantum-well (QW) heterojunction bipolar transistor laser, inherently a fast switching device, operates by transporting a small minority base charge density∼1016cm -3 over a nanoscale base thickness (<900A) in picoseconds. The TL, owing to its fast recombination speed, its unique three-terminal configuration, and complementary nature of its optical and electrical collector output signals, enables resonance-free base current and collector voltage modulation. It is a compact source of electrooptical applications such as nonlinear signal mixing, frequency multiplication, negative feedback, and optoelectronics logic gates.
AB - Based on the invention and operation of the transistor, the alloy diode laser, the quantum-well diode laser and the high-speed heterojunction bipolar transistor (HBT), we have invented and realized now a transistor laser (TL). The transistor laser is a three-terminal technology providing coupling and the coherent light emission in the transistor. The quantum-well (QW) heterojunction bipolar transistor laser, inherently a fast switching device, operates by transporting a small minority base charge density∼1016cm -3 over a nanoscale base thickness (<900A) in picoseconds. The TL, owing to its fast recombination speed, its unique three-terminal configuration, and complementary nature of its optical and electrical collector output signals, enables resonance-free base current and collector voltage modulation. It is a compact source of electrooptical applications such as nonlinear signal mixing, frequency multiplication, negative feedback, and optoelectronics logic gates.
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U2 - 10.1209/0295-5075/109/18001
DO - 10.1209/0295-5075/109/18001
M3 - Article
AN - SCOPUS:84921721604
SN - 0295-5075
VL - 109
JO - EPL
JF - EPL
IS - 1
ER -