Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Research output: Contribution to journalArticlepeer-review


MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm2/Vs and a sheet density of 2.85 × 1012cm-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to l.0μm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18μm gate length device, a unity current gain cutoff frequency (fT) of 204GHz is obtained. To the authors' knowledge, this is the highest fT to date for a metamorphic HEMT on GaAs.

Original languageEnglish (US)
Pages (from-to)1854-1856
Number of pages3
JournalElectronics Letters
Issue number21
StatePublished - Oct 14 1999

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Metamorphic in<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As HEMTs on GaAs substrate with f<sub>T</sub> over 200GHz'. Together they form a unique fingerprint.

Cite this