Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz

D. C. Dumka; W. E. Hoke; P. J. Lemonias; G. Cueva; I. Adesida

doi:10.1049/el:19991267

Metamorphic in_0.52Al_0.48As/In_0.53Ga_0.47As HEMTs on GaAs substrate with f_T over 200GHz

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

MBE-grown metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm²/Vs and a sheet density of 2.85 × 10¹²cm^-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to l.0μm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18μm gate length device, a unity current gain cutoff frequency (f_T) of 204GHz is obtained. To the authors' knowledge, this is the highest f_T to date for a metamorphic HEMT on GaAs.

Original language	English (US)
Pages (from-to)	1854-1856
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	21
DOIs	https://doi.org/10.1049/el:19991267
State	Published - Oct 14 1999
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19991267

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title = "Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz",

abstract = "MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm2/Vs and a sheet density of 2.85 × 1012cm-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to l.0μm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18μm gate length device, a unity current gain cutoff frequency (fT) of 204GHz is obtained. To the authors' knowledge, this is the highest fT to date for a metamorphic HEMT on GaAs.",

author = "Dumka, {D. C.} and Hoke, {W. E.} and Lemonias, {P. J.} and G. Cueva and I. Adesida",

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T1 - Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz

AU - Dumka, D. C.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Cueva, G.

AU - Adesida, I.

PY - 1999/10/14

Y1 - 1999/10/14

N2 - MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm2/Vs and a sheet density of 2.85 × 1012cm-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to l.0μm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18μm gate length device, a unity current gain cutoff frequency (fT) of 204GHz is obtained. To the authors' knowledge, this is the highest fT to date for a metamorphic HEMT on GaAs.

AB - MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm2/Vs and a sheet density of 2.85 × 1012cm-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to l.0μm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18μm gate length device, a unity current gain cutoff frequency (fT) of 204GHz is obtained. To the authors' knowledge, this is the highest fT to date for a metamorphic HEMT on GaAs.

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