Metamorphic 2.1-2.2eV InGaP solar cells on GaP substrates

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, M. L. Lee

Research output: Contribution to journalArticlepeer-review


We demonstrate ∼2.1-2.2eV InyGa1-yP (y=0.18-0.30) solar cells on GaP substrates for potential use in future high-efficiency multi-junction solar cells. Due to increased direct absorption compared to GaP, the InyGa1-yP solar cells exhibited much higher short-circuit current density than indirect gap GaP solar cells with only a slight decrease in open-circuit voltage. As such, the InyGa 1-yP solar cells presented here possessed higher efficiency than comparable GaP solar cells. By taking advantage of strong direct-gap absorption, we believe that metamorphic InyGa1-yP will be an ideal top cell material for future multi-junction devices.

Original languageEnglish (US)
Article number173903
JournalApplied Physics Letters
Issue number17
StatePublished - Apr 28 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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