Metamorphic 1.7 eV InGaP front- And rear-junction solar cells with high open- circuit voltage

Mijung Kim, Yukun Sun, Ryan D. Hool, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a materials and device study on metamorphic 1.7 eV In0.63Ga0.37P (MM InGaP) grown by molecular beam epitaxy (MBE). Rapid thermal annealing (RTA) greatly enhanced time-resolved photoluminescence lifetimes (τTRPL) of both MM p- and n-InGaP double heterostructures (DHs), suggesting the potential for high-performance MM 1.7 eV InGaP solar cells. MM InGaP front-junction (FJ) cells show high peak internal quantum efficiency (IQE), while MM rear-heterojunction (RHJ) InGaP cells show low WOC = Eg/q-VOC values.

Original languageEnglish (US)
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1762
Number of pages1
ISBN (Electronic)9781665419222
DOIs
StatePublished - Jun 20 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: Jun 20 2021Jun 25 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period6/20/216/25/21

Keywords

  • 1.7 eV InGaP
  • MM RHJ cells
  • MM materials
  • RTA
  • TRPL lifetime

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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