Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

R. P. Schneider; K. L. Lear; K. D. Choquette; M. H. Crawford; K. P. Killeen; S. P. Kilcoyne; J. J. Figiel

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

R. P. Schneider, K. L. Lear, K. D. Choquette, M. H. Crawford, K. P. Killeen, S. P. Kilcoyne, J. J. Figiel

Research output: Contribution to journal › Conference article › peer-review

Abstract

Vertical cavity surface emitting lasers (VCSELs) seem to have a lot of applications due to their many unique advantages including single longitudinal optical mode operation, surface normal output, ease of fabrication into two dimensional arrays and wafer level testing. The paper discusses the performance of a InGaAs/AlGaAs based IR VCSELs employing continuous grading schemes in the DBRs and efficient room temperature CW operation of VCSELs at red (670 nm) wavelengths using AlGaInP/AlGaAs heterostructures in the optical cavity. Also discussed is the advantage of MOVPE for the growth of vertical cavity surface emitting laser diodes.

Original language	English (US)
Pages (from-to)	5-6
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - 1994
Externally published	Yes
Event	Proceedings of the LEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, USA Duration: Jul 11 1994 → Jul 13 1994

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{2dc0a12eb2a441d7981f63584aec00a0,

title = "Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes",

abstract = "Vertical cavity surface emitting lasers (VCSELs) seem to have a lot of applications due to their many unique advantages including single longitudinal optical mode operation, surface normal output, ease of fabrication into two dimensional arrays and wafer level testing. The paper discusses the performance of a InGaAs/AlGaAs based IR VCSELs employing continuous grading schemes in the DBRs and efficient room temperature CW operation of VCSELs at red (670 nm) wavelengths using AlGaInP/AlGaAs heterostructures in the optical cavity. Also discussed is the advantage of MOVPE for the growth of vertical cavity surface emitting laser diodes.",

author = "Schneider, {R. P.} and Lear, {K. L.} and Choquette, {K. D.} and Crawford, {M. H.} and Killeen, {K. P.} and Kilcoyne, {S. P.} and Figiel, {J. J.}",

note = "Funding Information: The authors acknowledge E.D. Jones, M.E. Warren, A. Owyoung and J.Y. Tsao for useful technical discussions and continued support. This work was performed at Sandia National Laboratories under D.O.E. contract No. DE-ACO4-94AL85000. J.A.L. acknowledges additional- support from the Air Force Institute of Technology, Wright-Patterson AFB, Dayton, OH.; Proceedings of the LEOS 1994 Summer Topical Meeting ; Conference date: 11-07-1994 Through 13-07-1994",

year = "1994",

language = "English (US)",

pages = "5--6",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

AU - Schneider, R. P.

AU - Lear, K. L.

AU - Choquette, K. D.

AU - Crawford, M. H.

AU - Killeen, K. P.

AU - Kilcoyne, S. P.

AU - Figiel, J. J.

N1 - Funding Information: The authors acknowledge E.D. Jones, M.E. Warren, A. Owyoung and J.Y. Tsao for useful technical discussions and continued support. This work was performed at Sandia National Laboratories under D.O.E. contract No. DE-ACO4-94AL85000. J.A.L. acknowledges additional- support from the Air Force Institute of Technology, Wright-Patterson AFB, Dayton, OH.

PY - 1994

Y1 - 1994

N2 - Vertical cavity surface emitting lasers (VCSELs) seem to have a lot of applications due to their many unique advantages including single longitudinal optical mode operation, surface normal output, ease of fabrication into two dimensional arrays and wafer level testing. The paper discusses the performance of a InGaAs/AlGaAs based IR VCSELs employing continuous grading schemes in the DBRs and efficient room temperature CW operation of VCSELs at red (670 nm) wavelengths using AlGaInP/AlGaAs heterostructures in the optical cavity. Also discussed is the advantage of MOVPE for the growth of vertical cavity surface emitting laser diodes.

AB - Vertical cavity surface emitting lasers (VCSELs) seem to have a lot of applications due to their many unique advantages including single longitudinal optical mode operation, surface normal output, ease of fabrication into two dimensional arrays and wafer level testing. The paper discusses the performance of a InGaAs/AlGaAs based IR VCSELs employing continuous grading schemes in the DBRs and efficient room temperature CW operation of VCSELs at red (670 nm) wavelengths using AlGaInP/AlGaAs heterostructures in the optical cavity. Also discussed is the advantage of MOVPE for the growth of vertical cavity surface emitting laser diodes.

UR - http://www.scopus.com/inward/record.url?scp=0028591763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028591763&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028591763

SN - 1099-4742

SP - 5

EP - 6

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the LEOS 1994 Summer Topical Meeting

Y2 - 11 July 1994 through 13 July 1994

ER -

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

Abstract

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