Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

R. P. Schneider; J. A. Lott; K. L. Lear; K. D. Choquette; M. H. Crawford; S. P. Kilcoyne; J. J. Figiel

doi:10.1016/0022-0248(94)91151-7

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

R. P. Schneider, J. A. Lott, K. L. Lear, K. D. Choquette, M. H. Crawford, S. P. Kilcoyne, J. J. Figiel

Research output: Contribution to journal › Article › peer-review

Abstract

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Original language	English (US)
Pages (from-to)	838-845
Number of pages	8
Journal	Journal of Crystal Growth
Volume	145
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)91151-7
State	Published - Dec 2 1994
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(94)91151-7

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title = "Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes",

abstract = "Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.",

author = "Schneider, {R. P.} and Lott, {J. A.} and Lear, {K. L.} and Choquette, {K. D.} and Crawford, {M. H.} and Kilcoyne, {S. P.} and Figiel, {J. J.}",

note = "Funding Information: The authors acknowledge E.D. Jones, M.E. Warren, A. Owyoung and J.Y. Tsao for useful technical discussions and continued support. This work was performed at Sandia National Laboratories under D.O.E. contract No. DE-ACO4-94AL85000. J.A.L. acknowledges additional- support from the Air Force Institute of Technology, Wright-Patterson AFB, Dayton, OH.",

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T1 - Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

AU - Schneider, R. P.

AU - Lott, J. A.

AU - Lear, K. L.

AU - Choquette, K. D.

AU - Crawford, M. H.

AU - Kilcoyne, S. P.

AU - Figiel, J. J.

N1 - Funding Information: The authors acknowledge E.D. Jones, M.E. Warren, A. Owyoung and J.Y. Tsao for useful technical discussions and continued support. This work was performed at Sandia National Laboratories under D.O.E. contract No. DE-ACO4-94AL85000. J.A.L. acknowledges additional- support from the Air Force Institute of Technology, Wright-Patterson AFB, Dayton, OH.

PY - 1994/12/2

Y1 - 1994/12/2

N2 - Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

AB - Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

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Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

Abstract

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