Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

R. P. Schneider, J. A. Lott, K. L. Lear, K. D. Choquette, M. H. Crawford, S. P. Kilcoyne, J. J. Figiel

Research output: Contribution to journalArticlepeer-review

Abstract

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Original languageEnglish (US)
Pages (from-to)838-845
Number of pages8
JournalJournal of Crystal Growth
Volume145
Issue number1-4
DOIs
StatePublished - Dec 2 1994
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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