Metal-molecule schottky junction effects in surface enhanced raman scattering

Manas Ranjan Gartia; Tiziana C. Bond; Gang Logan Liu

doi:10.1021/jp1065083

Metal-molecule schottky junction effects in surface enhanced raman scattering

Manas Ranjan Gartia, Tiziana C. Bond, Gang Logan Liu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal-molecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2-4 more orders of enhancement in SERS.

Original language	English (US)
Pages (from-to)	318-328
Number of pages	11
Journal	Journal of Physical Chemistry A
Volume	115
Issue number	3
DOIs	https://doi.org/10.1021/jp1065083
State	Published - Jan 27 2011

ASJC Scopus subject areas

Physical and Theoretical Chemistry

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AB - We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal-molecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2-4 more orders of enhancement in SERS.

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Metal-molecule schottky junction effects in surface enhanced raman scattering

Abstract

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