Abstract
We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal-molecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2-4 more orders of enhancement in SERS.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 318-328 |
| Number of pages | 11 |
| Journal | Journal of Physical Chemistry A |
| Volume | 115 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 27 2011 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry