Abstract
The electronic transition at a metal-semiconductor (M-S) heterojunction within a single-walled carbon nanotubes (SWNT) at the sub-nanometer scale, is characterized through ultrahigh vacuum scanning tunneling microscopy (UHV-STM). STM images show a well-defined physical transition region between semiconducting and metallic nanotube segments while tunneling spectra indicate a gradual transition in SWNT conducting behavior. STM studies of SWNT/III-V systems indicates that charge transfer from the n-InAs(110) surface generally induce p-type behavior within supported semiconducting SWNTs. Scanning tunneling spectroscopy (STS) measurement confirmed the existence of metal-induced gap states (MIGS)originating at the junction interface, with enhanced conductance nanotube segment. Energetically-resolved current image tunneling spectroscopy (CITS) data enabled a quantitative evaluation of the evanscent-state decay.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 280-284 |
| Number of pages | 5 |
| Journal | Small |
| Volume | 3 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2007 |
Keywords
- Carbon nanotubes
- Heterojunctions
- Molecular electronics
- Scanning tunneling microscopy
- Semiconductors
ASJC Scopus subject areas
- General Chemistry
- Engineering (miscellaneous)
- Biotechnology
- General Materials Science
- Biomaterials