Abstract
Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor-liquid-solid (VLS) or vapor-solid-solid (VSS) mechanism has yielded growth directions in 〈1 1 1〉, 〈1 0 0〉 and 〈1 1 0〉 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS grown epitaxial semiconductor nanowires, providing an indexed glimpse of the control of nanowire growth directions and thus the mechanical, electrical and optical properties associated with the crystal orientation. The prospect of using planar nanowires for large area planar processing toward future nanowire array-based nanoelectronics and photonic applications is discussed.
| Original language | English (US) |
|---|---|
| Article number | 024005 |
| Journal | Semiconductor Science and Technology |
| Volume | 25 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 22 2010 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Metal-catalyzed semiconductor nanowires : A review on the control of growth directions. / Fortuna, Seth A.; Li, Xiuling.
In: Semiconductor Science and Technology, Vol. 25, No. 2, 024005, 22.02.2010.Research output: Contribution to journal › Review article
}
TY - JOUR
T1 - Metal-catalyzed semiconductor nanowires
T2 - A review on the control of growth directions
AU - Fortuna, Seth A.
AU - Li, Xiuling
PY - 2010/2/22
Y1 - 2010/2/22
N2 - Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor-liquid-solid (VLS) or vapor-solid-solid (VSS) mechanism has yielded growth directions in 〈1 1 1〉, 〈1 0 0〉 and 〈1 1 0〉 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS grown epitaxial semiconductor nanowires, providing an indexed glimpse of the control of nanowire growth directions and thus the mechanical, electrical and optical properties associated with the crystal orientation. The prospect of using planar nanowires for large area planar processing toward future nanowire array-based nanoelectronics and photonic applications is discussed.
AB - Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor-liquid-solid (VLS) or vapor-solid-solid (VSS) mechanism has yielded growth directions in 〈1 1 1〉, 〈1 0 0〉 and 〈1 1 0〉 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS grown epitaxial semiconductor nanowires, providing an indexed glimpse of the control of nanowire growth directions and thus the mechanical, electrical and optical properties associated with the crystal orientation. The prospect of using planar nanowires for large area planar processing toward future nanowire array-based nanoelectronics and photonic applications is discussed.
UR - http://www.scopus.com/inward/record.url?scp=76749155757&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=76749155757&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/25/2/024005
DO - 10.1088/0268-1242/25/2/024005
M3 - Review article
AN - SCOPUS:76749155757
VL - 25
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 2
M1 - 024005
ER -