Metal Assisted Chemical Etching To Produce III-V Semiconductor Nanostructures

Xiuling Li; Matthew T. Dejarld; Parsian Katal Mohseni; Jae Cheol Shin; Winston Chern

Metal Assisted Chemical Etching To Produce III-V Semiconductor Nanostructures

Xiuling Li (Inventor)
, Matthew T. Dejarld (Inventor)
, Parsian Katal Mohseni (Inventor)
, Jae Cheol Shin (Inventor)
, Winston Chern (Inventor)

Electrical and Computer Engineering

Research output: Patent

Abstract

Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

Original language	English (US)
U.S. patent number	RE48407
Filing date	2/10/17
State	Published - Jan 26 2021

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@misc{2fbe831c28d541be8c28da057bdf36e8,

title = "Metal Assisted Chemical Etching To Produce III-V Semiconductor Nanostructures",

abstract = "Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.",

author = "Xiuling Li and Dejarld, \{Matthew T.\} and Mohseni, \{Parsian Katal\} and Shin, \{Jae Cheol\} and Winston Chern",

note = "FEDERALLY FUNDED RESEARCH OR DEVELOPMENT The invention described herein was made with government support under contract number CMMI0749028 awarded by the National Science Foundation. The U.S. Government has certain rights in this invention. ; RE48407",

year = "2021",

month = jan,

day = "26",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Metal Assisted Chemical Etching To Produce III-V Semiconductor Nanostructures

AU - Li, Xiuling

AU - Dejarld, Matthew T.

AU - Mohseni, Parsian Katal

AU - Shin, Jae Cheol

AU - Chern, Winston

N1 - FEDERALLY FUNDED RESEARCH OR DEVELOPMENT The invention described herein was made with government support under contract number CMMI0749028 awarded by the National Science Foundation. The U.S. Government has certain rights in this invention.

PY - 2021/1/26

Y1 - 2021/1/26

N2 - Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

AB - Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

M3 - Patent

M1 - RE48407

Y2 - 2017/02/10

ER -

Metal Assisted Chemical Etching To Produce III-V Semiconductor Nanostructures

Abstract

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