Metal Assisted Chemical Etching To Produce III-V Semiconductor Nanostructures

Winston Chern (Inventor), Matthew T Dejarld (Inventor), Jae Cheol Shin (Inventor), Parsian Katal Mohseni (Inventor), Xiuling Li (Inventor)

Research output: Patent


Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.
Original languageEnglish (US)
U.S. patent numberRE48407
StatePublished - Jan 26 2021


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