Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors

Sami Znati, Juwon Wharwood, Kyle G. Tezanos, Xiuling Li, Parsian K. Mohseni

Research output: Contribution to journalReview articlepeer-review

Abstract

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.

Original languageEnglish (US)
Pages (from-to)10901-10946
Number of pages46
JournalNanoscale
Volume16
Issue number23
DOIs
StatePublished - May 28 2024
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science

Fingerprint

Dive into the research topics of 'Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors'. Together they form a unique fingerprint.

Cite this