TY - PAT
T1 - Memory device that selectively stores holes
AU - De Sousa, Jeanlex Soares
AU - Leburton, Jean-Pierre
AU - Freire, Valder Nogueira
AU - De Aquino Farias, Gil
N1 - STATEMENT AS TO FEDERALLY SPONSORED RESEARCH This invention was made with government support under National Science Foundation awarded under Grant No. DMR-03 25939 ITR. The government has certain rights in this invention.
PY - 2012/6/12
Y1 - 2012/6/12
N2 - A system that incorporates teachings of the present disclosure may include, for example, a memory device having a memory cell to selectively store holes by photon and bias voltage induction as a representation of binary values.
AB - A system that incorporates teachings of the present disclosure may include, for example, a memory device having a memory cell to selectively store holes by photon and bias voltage induction as a representation of binary values.
M3 - Patent
M1 - 8199580
ER -