Mechanism of stress-induced leakage current in MOS capacitors

Elyse Rosenbaum, Leonard F. Register

Research output: Contribution to journalArticle

Abstract

Stress-induced leakage current (SILC) is examined both below and above the voltage at which the preexisting Fowler-Nordheim tunneling current dominates. Based on these results, it is argued that SILC is the result of inelastic rather than elastic trap-assisted tunneling. This carification explains the well-known thickness dependence of the SILC at low fields that has identified it as a scaling limitation for nonvolatile memory tunnel oxide. It also explains a newly observed different thickness dependence at high fields and facilitates modeling of the electric field/voltage and trap density dependencies of the SILC.

Original languageEnglish (US)
Pages (from-to)317-323
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume44
Issue number2
DOIs
StatePublished - Dec 1 1997

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Keywords

  • Inelastic tunneling
  • Stress-induced leakage current
  • Trap-assisted tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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