Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Zhi Chen, Karl Hess, Jinju Lee, Joseph W. Lyding, Elyse Rosenbaum, Isik Kizilyalli, Sundar Chetlur

Research output: Contribution to journalConference article

Abstract

New experiments for the deuterium isotope effect for hot hole and electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors. The results from these new experiments suggest that electrons in the channel, but not those electrons or holes injected into the oxide, are primarily responsible for the interface trap generation. The bond breaking at the SiO2-Si interface is primarily due to the multiple vibrational excitation, which involves in a strong isotope effect.

Original languageEnglish (US)
Pages (from-to)85-88
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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