Abstract
New experiments for the deuterium isotope effect for hot hole and electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors. The results from these new experiments suggest that electrons in the channel, but not those electrons or holes injected into the oxide, are primarily responsible for the interface trap generation. The bond breaking at the SiO2-Si interface is primarily due to the multiple vibrational excitation, which involves in a strong isotope effect.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 85-88 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1999 |
| Externally published | Yes |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry