Recent work has suggested that prior determinations of diffusion mechanism and point defect thermodynamics in silicon have been affected by nonequilibrium effects stemming from uncontrolled adsorption-induced suppression of a pathway for defect creation at the surface. Through silicon self-diffusion measurements in ultrahigh vacuum in a short-time kinetic limit, the present work shows unambiguously that interstitials are the primary mediators of self-diffusion over the range 650-1000°C, moving over distances of 5-9 nm before exchanging into the lattice. The Frank-Turnbull mechanism of interstitial formation does not play a significant role.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - May 17 2007|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics