Mechanism and energetics of self-interstitial formation and diffusion in silicon

Ramakrishnan Vaidyanathan, Michael Y.L. Jung, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

Recent work has suggested that prior determinations of diffusion mechanism and point defect thermodynamics in silicon have been affected by nonequilibrium effects stemming from uncontrolled adsorption-induced suppression of a pathway for defect creation at the surface. Through silicon self-diffusion measurements in ultrahigh vacuum in a short-time kinetic limit, the present work shows unambiguously that interstitials are the primary mediators of self-diffusion over the range 650-1000°C, moving over distances of 5-9 nm before exchanging into the lattice. The Frank-Turnbull mechanism of interstitial formation does not play a significant role.

Original languageEnglish (US)
Article number195209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number19
DOIs
StatePublished - May 17 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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