Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems

H. T. Johnson, L. B. Freund

Research output: Contribution to journalArticle

Abstract

A combined analytical and computational model is developed to study the mechanics of strained epitaxial island growth in typical semiconductor systems. Under certain growth conditions in systems with a film/substrate lattice mismatch, deposited material is known to aggregate into islandlike shapes with geometries having arc shaped cross-sections. A two-dimensional model assuming linear elastic behavior is used to analyze an isolated arc shaped island with elastic properties similar to those of the substrate. The substrate is assumed to be much larger than the island. Finite element analysis shows that in order to minimize the total energy, which consists of strain energy, surface energy, and film/substrate interface energy, a coherent island will adopt a particular height-to-width aspect ratio that is a function of only the island volume. It is then shown that for an island with volume greater than a certain critical size, the inclusion of a mismatch strain relieving edge dislocation is favorable. The criterion for the critical size is based on a comparison of the configurational forces acting on the edge of the island in the presence of an edge dislocation. Finally, a finite element calculation combined with an analytical treatment of the singular dislocation fields is used to determine the minimum energy island aspect ratio for the dislocated island/substrate system. The combination of the minimum energy morphology studies for the coherent and dislocated systems with the dislocation nucleation criterion gives a complete model for strained epitaxial island growth which can serve as a basis for interpretation of experiments.

Original languageEnglish (US)
Pages (from-to)6081-6090
Number of pages10
JournalJournal of Applied Physics
Volume81
Issue number9
DOIs
StatePublished - May 1 1997

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edge dislocations
aspect ratio
arcs
energy
relieving
two dimensional models
surface energy
elastic properties
nucleation
inclusions
cross sections
geometry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems. / Johnson, H. T.; Freund, L. B.

In: Journal of Applied Physics, Vol. 81, No. 9, 01.05.1997, p. 6081-6090.

Research output: Contribution to journalArticle

@article{fc2e3385adf3400cb07cb4419c04363c,
title = "Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems",
abstract = "A combined analytical and computational model is developed to study the mechanics of strained epitaxial island growth in typical semiconductor systems. Under certain growth conditions in systems with a film/substrate lattice mismatch, deposited material is known to aggregate into islandlike shapes with geometries having arc shaped cross-sections. A two-dimensional model assuming linear elastic behavior is used to analyze an isolated arc shaped island with elastic properties similar to those of the substrate. The substrate is assumed to be much larger than the island. Finite element analysis shows that in order to minimize the total energy, which consists of strain energy, surface energy, and film/substrate interface energy, a coherent island will adopt a particular height-to-width aspect ratio that is a function of only the island volume. It is then shown that for an island with volume greater than a certain critical size, the inclusion of a mismatch strain relieving edge dislocation is favorable. The criterion for the critical size is based on a comparison of the configurational forces acting on the edge of the island in the presence of an edge dislocation. Finally, a finite element calculation combined with an analytical treatment of the singular dislocation fields is used to determine the minimum energy island aspect ratio for the dislocated island/substrate system. The combination of the minimum energy morphology studies for the coherent and dislocated systems with the dislocation nucleation criterion gives a complete model for strained epitaxial island growth which can serve as a basis for interpretation of experiments.",
author = "Johnson, {H. T.} and Freund, {L. B.}",
year = "1997",
month = "5",
day = "1",
doi = "10.1063/1.364357",
language = "English (US)",
volume = "81",
pages = "6081--6090",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems

AU - Johnson, H. T.

AU - Freund, L. B.

PY - 1997/5/1

Y1 - 1997/5/1

N2 - A combined analytical and computational model is developed to study the mechanics of strained epitaxial island growth in typical semiconductor systems. Under certain growth conditions in systems with a film/substrate lattice mismatch, deposited material is known to aggregate into islandlike shapes with geometries having arc shaped cross-sections. A two-dimensional model assuming linear elastic behavior is used to analyze an isolated arc shaped island with elastic properties similar to those of the substrate. The substrate is assumed to be much larger than the island. Finite element analysis shows that in order to minimize the total energy, which consists of strain energy, surface energy, and film/substrate interface energy, a coherent island will adopt a particular height-to-width aspect ratio that is a function of only the island volume. It is then shown that for an island with volume greater than a certain critical size, the inclusion of a mismatch strain relieving edge dislocation is favorable. The criterion for the critical size is based on a comparison of the configurational forces acting on the edge of the island in the presence of an edge dislocation. Finally, a finite element calculation combined with an analytical treatment of the singular dislocation fields is used to determine the minimum energy island aspect ratio for the dislocated island/substrate system. The combination of the minimum energy morphology studies for the coherent and dislocated systems with the dislocation nucleation criterion gives a complete model for strained epitaxial island growth which can serve as a basis for interpretation of experiments.

AB - A combined analytical and computational model is developed to study the mechanics of strained epitaxial island growth in typical semiconductor systems. Under certain growth conditions in systems with a film/substrate lattice mismatch, deposited material is known to aggregate into islandlike shapes with geometries having arc shaped cross-sections. A two-dimensional model assuming linear elastic behavior is used to analyze an isolated arc shaped island with elastic properties similar to those of the substrate. The substrate is assumed to be much larger than the island. Finite element analysis shows that in order to minimize the total energy, which consists of strain energy, surface energy, and film/substrate interface energy, a coherent island will adopt a particular height-to-width aspect ratio that is a function of only the island volume. It is then shown that for an island with volume greater than a certain critical size, the inclusion of a mismatch strain relieving edge dislocation is favorable. The criterion for the critical size is based on a comparison of the configurational forces acting on the edge of the island in the presence of an edge dislocation. Finally, a finite element calculation combined with an analytical treatment of the singular dislocation fields is used to determine the minimum energy island aspect ratio for the dislocated island/substrate system. The combination of the minimum energy morphology studies for the coherent and dislocated systems with the dislocation nucleation criterion gives a complete model for strained epitaxial island growth which can serve as a basis for interpretation of experiments.

UR - http://www.scopus.com/inward/record.url?scp=0001541274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001541274&partnerID=8YFLogxK

U2 - 10.1063/1.364357

DO - 10.1063/1.364357

M3 - Article

AN - SCOPUS:0001541274

VL - 81

SP - 6081

EP - 6090

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -