Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

Shimin Mao; Tao Shang; Byoungnam Park; Daniel D. Anderson; Shen J Dillon

doi:10.1063/1.4871509

Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

Shimin Mao, Tao Shang, Byoungnam Park, Daniel D. Anderson, Shen J Dillon

Research output: Contribution to journal › Article › peer-review

Abstract

This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area.

Original language	English (US)
Article number	153105
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871509
State	Published - Jan 1 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4871509

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title = "Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes",

abstract = "This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area.",

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