Measurements of interface stress of silicon dioxide in contact with water-phenol mixtures by bending of microcantilevers

Xijing Zhang, David G. Cahill

Research output: Contribution to journalArticlepeer-review

Abstract

We use the bending of silicon microcantilevers to measure changes in mechanical stress at interfaces between phenol - water mixtures and SiO 2. The curvature of the microcantilever is measured by an optical system that combines a rapidly scanning laser beam, a position-sensitive detector, and lock-in detection to achieve a long-time stability on the order of 6 mN m -1 over 4 h and a short-time sensitivity of better than 1 mN m -1. Thermally oxidized Si shows the smallest changes in interface stress as a function of phenol concentration in water. For hydrophilic SiO 2 prepared by chemical treatment, the change in interface stress at 5 wt % phenol in water is larger than that of thermally oxidized Si by -60 mN m -1 for SiO 2 formed by exposure of the silicon microcantilever to ozone, the change in surface stress is larger than that of thermally oxidized Si by -330 mN m -1.

Original languageEnglish (US)
Pages (from-to)9062-9066
Number of pages5
JournalLangmuir
Volume22
Issue number21
DOIs
StatePublished - Oct 10 2006

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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