Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 ° C

Emmett E. Perl, John Simon, John F. Geisz, Minjoo Larry Lee, Daniel J. Friedman, Myles A. Steiner

Research output: Contribution to journalArticlepeer-review


In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 °C. The temperature-dependent J 01and J 02dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 °C. As the temperature is increased, we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ∼30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-Temperature solar cell operation.

Original languageEnglish (US)
Article number7511789
Pages (from-to)1345-1352
Number of pages8
JournalIEEE Journal of Photovoltaics
Issue number5
StatePublished - Sep 2016


  • III-V and concentrator photovoltaics (PV)
  • PV cells
  • semiconductor materials
  • solar energy
  • temperature dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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