@article{efb34dfcd376467797e6c312b87d1f32,
title = "Measurement of photostimulated self-diffusion in silicon",
abstract = "Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.",
author = "Seebauer, {Edmund G.} and Jung, {Michael Y.L.} and Kwok, {Charlotte T.M.} and Ramakrishnan Vaidyanathan and Kondratenko, {Yevgeniy V.}",
note = "Funding Information: This work was partially supported by NSF (CTS 98-06329, CTS 02-03237, and DMR 07-04354) and by the ACS Petroleum Research Fund (43651-AC5). SIMS was performed at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy (DOE) under grant DEFG02-96-ER45439. We thank Judith Baker for significant help in interpreting the SIMS results, and Steve Burdin at Isonics Corp. for overseeing the successful creation of isotopically labeled specimens.",
year = "2011",
month = may,
day = "15",
doi = "10.1063/1.3590710",
language = "English (US)",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",
}