Abstract
Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.
Original language | English (US) |
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Article number | 103708 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 10 |
DOIs | |
State | Published - May 15 2011 |
ASJC Scopus subject areas
- General Physics and Astronomy