Measurement of photostimulated self-diffusion in silicon

Edmund G. Seebauer; Michael Y.L. Jung; Charlotte T.M. Kwok; Ramakrishnan Vaidyanathan; Yevgeniy V. Kondratenko

doi:10.1063/1.3590710

Measurement of photostimulated self-diffusion in silicon

Edmund G. Seebauer, Michael Y.L. Jung, Charlotte T.M. Kwok, Ramakrishnan Vaidyanathan, Yevgeniy V. Kondratenko

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm². Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

Original language	English (US)
Article number	103708
Journal	Journal of Applied Physics
Volume	109
Issue number	10
DOIs	https://doi.org/10.1063/1.3590710
State	Published - May 15 2011

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3590710

Fingerprint Dive into the research topics of 'Measurement of photostimulated self-diffusion in silicon'. Together they form a unique fingerprint.

Cite this

@article{efb34dfcd376467797e6c312b87d1f32,

title = "Measurement of photostimulated self-diffusion in silicon",

abstract = "Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.",

author = "Seebauer, {Edmund G.} and Jung, {Michael Y.L.} and Kwok, {Charlotte T.M.} and Ramakrishnan Vaidyanathan and Kondratenko, {Yevgeniy V.}",

year = "2011",

month = may,

day = "15",

doi = "10.1063/1.3590710",

language = "English (US)",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Measurement of photostimulated self-diffusion in silicon

AU - Seebauer, Edmund G.

AU - Jung, Michael Y.L.

AU - Kwok, Charlotte T.M.

AU - Vaidyanathan, Ramakrishnan

AU - Kondratenko, Yevgeniy V.

PY - 2011/5/15

Y1 - 2011/5/15

N2 - Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

AB - Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=79958778731&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958778731&partnerID=8YFLogxK

U2 - 10.1063/1.3590710

DO - 10.1063/1.3590710

M3 - Article

AN - SCOPUS:79958778731

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 103708

ER -