Measurement of photostimulated self-diffusion in silicon

Edmund G. Seebauer, Michael Y.L. Jung, Charlotte T.M. Kwok, Ramakrishnan Vaidyanathan, Yevgeniy V. Kondratenko

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Abstract

Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

Original languageEnglish (US)
Article number103708
JournalJournal of Applied Physics
Volume109
Issue number10
DOIs
StatePublished - May 15 2011

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Seebauer, E. G., Jung, M. Y. L., Kwok, C. T. M., Vaidyanathan, R., & Kondratenko, Y. V. (2011). Measurement of photostimulated self-diffusion in silicon. Journal of Applied Physics, 109(10), [103708]. https://doi.org/10.1063/1.3590710