Measurement of photostimulated self-diffusion in silicon

Edmund G. Seebauer; Michael Y.L. Jung; Charlotte T.M. Kwok; Ramakrishnan Vaidyanathan; Yevgeniy V. Kondratenko

doi:10.1063/1.3590710

Measurement of photostimulated self-diffusion in silicon

Edmund G. Seebauer, Michael Y.L. Jung, Charlotte T.M. Kwok, Ramakrishnan Vaidyanathan, Yevgeniy V. Kondratenko

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm². Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

Original language	English (US)
Article number	103708
Journal	Journal of Applied Physics
Volume	109
Issue number	10
DOIs	https://doi.org/10.1063/1.3590710
State	Published - May 15 2011

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General Physics and Astronomy

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10.1063/1.3590710

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title = "Measurement of photostimulated self-diffusion in silicon",

abstract = "Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.",

author = "Seebauer, {Edmund G.} and Jung, {Michael Y.L.} and Kwok, {Charlotte T.M.} and Ramakrishnan Vaidyanathan and Kondratenko, {Yevgeniy V.}",

note = "This work was partially supported by NSF (CTS 98-06329, CTS 02-03237, and DMR 07-04354) and by the ACS Petroleum Research Fund (43651-AC5). SIMS was performed at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy (DOE) under grant DEFG02-96-ER45439. We thank Judith Baker for significant help in interpreting the SIMS results, and Steve Burdin at Isonics Corp. for overseeing the successful creation of isotopically labeled specimens.",

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AU - Seebauer, Edmund G.

AU - Jung, Michael Y.L.

AU - Kwok, Charlotte T.M.

AU - Vaidyanathan, Ramakrishnan

AU - Kondratenko, Yevgeniy V.

N1 - This work was partially supported by NSF (CTS 98-06329, CTS 02-03237, and DMR 07-04354) and by the ACS Petroleum Research Fund (43651-AC5). SIMS was performed at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy (DOE) under grant DEFG02-96-ER45439. We thank Judith Baker for significant help in interpreting the SIMS results, and Steve Burdin at Isonics Corp. for overseeing the successful creation of isotopically labeled specimens.

PY - 2011/5/15

Y1 - 2011/5/15

N2 - Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

AB - Photostimulated diffusion within solid semiconductors has been examined for many years, but its existence above room temperature has not been unambiguously confirmed. Here, diffusion rates for silicon self-diffusion are shown to change by factors of up to 25 in response to optical fluxes on the order of 1 W/cm2. Results depend on doping type; the rates of both interstitial formation and migration are affected in the case of n-type material. A model based on photostimulated changes in defect charge state explains the primary results, and the basic outlines should apply to a wide variety of semiconductors.

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Measurement of photostimulated self-diffusion in silicon

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