Measurement of nonthermal illumination-enhanced self-diffusion in silicon

M. Y.L. Jung, E. G. Seebauer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There has long been suspicion that the strong lamp illumination required for annealing after ion implantation may nonthermally influence the diffusion of dopants. Identification of such effects is difficult in conventional RTA geometries because lamps provide both heating and photostimulation, and because the interpretation of conventional dopant diffusion experiments is impeded by complex dopant-defect interactions. We have circumvented these problems with a new experimental design in which heating and illumination can be decoupled. Data interpretation has been simplified by examining the motion of isotopically labelled Si tracer in an epitaxial 28Si matrix using SIMS depth profiling. Results show that for n-type Si, self-diffusion rates are increased nonthermally by more than an order of magnitude for modest illumination intensities of 0.7 W/cm2. There is no comparable effect for p-type material, however.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages87-89
Number of pages3
Volume4
ISBN (Print)7309039157
StatePublished - Aug 16 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: Mar 15 2004Mar 16 2004

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period3/15/043/16/04

ASJC Scopus subject areas

  • Engineering(all)

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