@inproceedings{62bedb6fd22b4ee68999b11c16ab0ab2,
title = "Measurement of nonthermal illumination-enhanced diffusion in silicon",
abstract = "Continued scaling of ultrashallow junctions in transistor devices raises the possibility that new physical effects connected with intense lamp illumination during rapid thermal annealing (RTA) need to be incorporated into models for transient enhanced diffusion (TED). Identification of such effects is difficult in conventional RTA geometries because lamps provide both heating and photostimulation, and because the interpretation of conventional dopant diffusion experiments is impeded by complex dopant-defect interactions and the presence of built-in electric fields in typical test structures. In this paper we present strong experimental evidence of nonthermal illumination-enhanced diffusion in unimplanted silicon.",
author = "Jung, \{M. Y.L.\} and Seebauer, \{E. G.\}",
note = "This work was supported by NSF (CTS 98-06329) and by Sematech. SIMS was performed at the DOE-supported Center for Microanalysis of Materials at the F. Seitz Materials Research Laboratory at UIUC.; 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 ; Conference date: 25-09-2002 Through 27-09-2002",
year = "2002",
doi = "10.1109/RTP.2002.1039451",
language = "English (US)",
series = "10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "133--135",
editor = "R. Singh and Z. Nenyei and B. Lojek and J. Gelpey",
booktitle = "10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002",
address = "United States",
}