Measurement of nonthermal illumination-enhanced diffusion in silicon

M. Y.L. Jung, E. G. Seebauer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Continued scaling of ultrashallow junctions in transistor devices raises the possibility that new physical effects connected with intense lamp illumination during rapid thermal annealing (RTA) need to be incorporated into models for transient enhanced diffusion (TED). Identification of such effects is difficult in conventional RTA geometries because lamps provide both heating and photostimulation, and because the interpretation of conventional dopant diffusion experiments is impeded by complex dopant-defect interactions and the presence of built-in electric fields in typical test structures. In this paper we present strong experimental evidence of nonthermal illumination-enhanced diffusion in unimplanted silicon.

Original languageEnglish (US)
Title of host publication10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
EditorsR. Singh, Z. Nenyei, B. Lojek, J. Gelpey
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages133-135
Number of pages3
ISBN (Electronic)0780374657, 9780780374652
DOIs
StatePublished - Jan 1 2002
Event10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 - Vancouver, Canada
Duration: Sep 25 2002Sep 27 2002

Publication series

Name10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Other

Other10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
CountryCanada
CityVancouver
Period9/25/029/27/02

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Jung, M. Y. L., & Seebauer, E. G. (2002). Measurement of nonthermal illumination-enhanced diffusion in silicon. In R. Singh, Z. Nenyei, B. Lojek, & J. Gelpey (Eds.), 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 (pp. 133-135). [1039451] (10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RTP.2002.1039451