MC simulation of strained-Si MOSFET with full-band structure and quantum correction

Xiao Feng Fan, Xin Wang, Brian Winstead, Leonard F. Register, Umberto Ravaioli, Sanjay K. Banerjee

Research output: Contribution to journalArticlepeer-review

Abstract

A new two-dimensional full-band Monte Carlo simulator, "Monte Carlo University of Texas" (MCUT) is introduced and described in this paper. MCUT combines some of the best features of semiclassical MC device simulation including full-band structure and flexibility of scattering processes, with generality of material composition and the ability to address degeneracy breaking among energy valleys and the associated effects on scattering and transport due to quantum confinement and strain effects. The latter capability derives for extension of a prior crystal-momentum-independent self-consistent Poisson-Schrödinger-based quantum corrected potential, to a valley dependent quantum correction via, in part, a new modeling concept of "effective strain" within the full-band structure code. Low field mobility simulation results for large tensile strained-Si channel nMOSFETs and unstrained-Si channel nMOSFETs device are compared with other simulation methods and experimental data to demonstrate the effectiveness of the approach, and the abilities to simulate high-field transport and transport in devices of a few 10s of nanometer channel lengths are briefly demonstrated.

Original languageEnglish (US)
Pages (from-to)962-970
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume51
Issue number6
DOIs
StatePublished - Jun 1 2004

Keywords

  • Full-band Monte Carlo (MC)
  • MOSFET simulations
  • Quantum effects
  • SiGe heterostructures
  • Strained-silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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