MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

Y. H. Wang; G. Hasnain; K. Tai; J. D. Wynn; B. E. Weir; K. D. Choquette; A. Y. Cho

doi:10.7567/ssdm.1991.pc3-5

MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

Y. H. Wang, G. Hasnain, K. Tai, J. D. Wynn, B. E. Weir, K. D. Choquette, A. Y. Cho

Research output: Contribution to conference › Paper › peer-review

Abstract

All molecular beam epitaxy grown planar top emitting AlGaAs/GaAs multi-quantum well lasers were fabricated and characterized. The vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al_0.2Ga_0.8As (100/80 A) quantum wells sandwiched between two two-step doped distributed Bragg reflector. Gain-guided VCSELs operate continuous wave up to 90°C with a characteristics temperature of 210°K and can be modulated at frequency above 5 GHz. Thresholds as low as 2 mA and CW powers more than 2 mW were obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is also demonstrated and discussed. The integrated photodetector shows a linear response to the laser emission with an effective responsitivity of 0.25 A/W.

Original language	English (US)
Pages	329-331
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.pc3-5
State	Published - 1991
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	8/27/91 → 8/29/91

ASJC Scopus subject areas

Engineering(all)

Online availability

10.7567/ssdm.1991.pc3-5

Library availability

Discover UIUC Full Text

Cite this

Wang, Y. H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D., & Cho, A. Y. (1991). MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures. 329-331. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn. https://doi.org/10.7567/ssdm.1991.pc3-5

Wang, YH, Hasnain, G, Tai, K, Wynn, JD, Weir, BE, Choquette, KD & Cho, AY 1991, 'MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures', Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, 8/27/91 - 8/29/91 pp. 329-331. https://doi.org/10.7567/ssdm.1991.pc3-5

@conference{31d5b5f5d0e64901abf9b3ac92c9f216,

title = "MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures",

abstract = "All molecular beam epitaxy grown planar top emitting AlGaAs/GaAs multi-quantum well lasers were fabricated and characterized. The vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 A) quantum wells sandwiched between two two-step doped distributed Bragg reflector. Gain-guided VCSELs operate continuous wave up to 90°C with a characteristics temperature of 210°K and can be modulated at frequency above 5 GHz. Thresholds as low as 2 mA and CW powers more than 2 mW were obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is also demonstrated and discussed. The integrated photodetector shows a linear response to the laser emission with an effective responsitivity of 0.25 A/W.",

author = "Wang, {Y. H.} and G. Hasnain and K. Tai and Wynn, {J. D.} and Weir, {B. E.} and Choquette, {K. D.} and Cho, {A. Y.}",

year = "1991",

doi = "10.7567/ssdm.1991.pc3-5",

language = "English (US)",

pages = "329--331",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

AU - Wang, Y. H.

AU - Hasnain, G.

AU - Tai, K.

AU - Wynn, J. D.

AU - Weir, B. E.

AU - Choquette, K. D.

AU - Cho, A. Y.

PY - 1991

Y1 - 1991

N2 - All molecular beam epitaxy grown planar top emitting AlGaAs/GaAs multi-quantum well lasers were fabricated and characterized. The vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 A) quantum wells sandwiched between two two-step doped distributed Bragg reflector. Gain-guided VCSELs operate continuous wave up to 90°C with a characteristics temperature of 210°K and can be modulated at frequency above 5 GHz. Thresholds as low as 2 mA and CW powers more than 2 mW were obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is also demonstrated and discussed. The integrated photodetector shows a linear response to the laser emission with an effective responsitivity of 0.25 A/W.

AB - All molecular beam epitaxy grown planar top emitting AlGaAs/GaAs multi-quantum well lasers were fabricated and characterized. The vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 A) quantum wells sandwiched between two two-step doped distributed Bragg reflector. Gain-guided VCSELs operate continuous wave up to 90°C with a characteristics temperature of 210°K and can be modulated at frequency above 5 GHz. Thresholds as low as 2 mA and CW powers more than 2 mW were obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is also demonstrated and discussed. The integrated photodetector shows a linear response to the laser emission with an effective responsitivity of 0.25 A/W.

UR - http://www.scopus.com/inward/record.url?scp=0025813849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025813849&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.pc3-5

DO - 10.7567/ssdm.1991.pc3-5

M3 - Paper

AN - SCOPUS:0025813849

SP - 329

EP - 331

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

Abstract

Other

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this