MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

Y. H. Wang, G. Hasnain, K. Tai, J. D. Wynn, B. E. Weir, K. D. Choquette, A. Y. Cho

Research output: Contribution to conferencePaperpeer-review

Abstract

All molecular beam epitaxy grown planar top emitting AlGaAs/GaAs multi-quantum well lasers were fabricated and characterized. The vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 A) quantum wells sandwiched between two two-step doped distributed Bragg reflector. Gain-guided VCSELs operate continuous wave up to 90°C with a characteristics temperature of 210°K and can be modulated at frequency above 5 GHz. Thresholds as low as 2 mA and CW powers more than 2 mW were obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is also demonstrated and discussed. The integrated photodetector shows a linear response to the laser emission with an effective responsitivity of 0.25 A/W.

Original languageEnglish (US)
Pages329-331
Number of pages3
DOIs
StatePublished - 1991
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: Aug 27 1991Aug 29 1991

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period8/27/918/29/91

ASJC Scopus subject areas

  • General Engineering

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