Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness (hc), etch depth (td), and opening width (p) obey hc1.06p-0.75td; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Jul 25 2016|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)