Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)

R. Liu, C. Bayram

Research output: Contribution to journalArticle

Abstract

Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness (hc), etch depth (td), and opening width (p) obey hc1.06p-0.75td; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.

Original languageEnglish (US)
Article number042103
JournalApplied Physics Letters
Volume109
Issue number4
DOIs
StatePublished - Jul 25 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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