Abstract
This paper describes a method for the reproducible Si-doping of GaAs epitaxial material in the range of lx1016 to 2x1019 cm-3, using a SiCl4 + AsC13 liquid source in a GaAs + Ga/H2/AsC13 chemical vapor deposition process. Excellent electron mobilities have been achieved for a variety of Si doped GaAs samples. Power FET devices made from this material have demonstrated output power densities of 0.86 watts/mm at 10 GHz. Low noise FET devices made from this material have demonstrated a noise figure of 2.2 dB with 8.5 dB associated gain at 12 GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 45-49 |
| Number of pages | 5 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 323 |
| DOIs | |
| State | Published - Sep 15 1982 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering