Material characterization and device performance of liquid doping si in gaas by ascl3 technique

M. Feng, V. Eu, T. Zielinski, J. M. Whelan

Research output: Contribution to journalArticle

Abstract

This paper describes a method for the reproducible Si-doping of GaAs epitaxial material in the range of lx1016 to 2x1019 cm-3, using a SiCl4 + AsC13 liquid source in a GaAs + Ga/H2/AsC13 chemical vapor deposition process. Excellent electron mobilities have been achieved for a variety of Si doped GaAs samples. Power FET devices made from this material have demonstrated output power densities of 0.86 watts/mm at 10 GHz. Low noise FET devices made from this material have demonstrated a noise figure of 2.2 dB with 8.5 dB associated gain at 12 GHz.

Original languageEnglish (US)
Pages (from-to)45-49
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume323
DOIs
StatePublished - Sep 15 1982

Fingerprint

Material Characterization
Gallium Arsenide
field effect transistors
Doping (additives)
Liquid
Liquids
liquids
electron mobility
low noise
radiant flux density
Chemical Vapor Deposition
Electron mobility
Noise figure
vapor deposition
Field effect transistors
Chemical vapor deposition
output
Figure
Electron
Output

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Material characterization and device performance of liquid doping si in gaas by ascl3 technique. / Feng, M.; Eu, V.; Zielinski, T.; Whelan, J. M.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 323, 15.09.1982, p. 45-49.

Research output: Contribution to journalArticle

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