Material characterization and device performance of liquid doping si in gaas by ascl3 technique

M. Feng, V. Eu, T. Zielinski, J. M. Whelan

Research output: Contribution to journalArticlepeer-review

Abstract

This paper describes a method for the reproducible Si-doping of GaAs epitaxial material in the range of lx1016 to 2x1019 cm-3, using a SiCl4 + AsC13 liquid source in a GaAs + Ga/H2/AsC13 chemical vapor deposition process. Excellent electron mobilities have been achieved for a variety of Si doped GaAs samples. Power FET devices made from this material have demonstrated output power densities of 0.86 watts/mm at 10 GHz. Low noise FET devices made from this material have demonstrated a noise figure of 2.2 dB with 8.5 dB associated gain at 12 GHz.

Original languageEnglish (US)
Pages (from-to)45-49
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume323
DOIs
StatePublished - Sep 15 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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