Ion beam lithography is a relatively new technique for fabricating high resolution features. We demonstrate the feasibility of fabricating submicron gate GaAs FET by masked ion beam lithography (MIBL) combined with conventional optical lithography. A fully transparent thin silicon film mask was used for MIBL. The electrical performance data of Al/GaAs Schottky diodes and of 0. 2-0. 5 mu m gate GaAs FETs obtained with this hybrid lithography process are also presented.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Number of pages||8|
|State||Published - 1983|
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