Abstract
Ion beam lithography is a relatively new technique for fabricating high resolution features. We demonstrate the feasibility of fabricating submicron gate GaAs FET by masked ion beam lithography (MIBL) combined with conventional optical lithography. A fully transparent thin silicon film mask was used for MIBL. The electrical performance data of Al/GaAs Schottky diodes and of 0. 2-0. 5 mu m gate GaAs FETs obtained with this hybrid lithography process are also presented.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Academic Press |
| Pages | 157-164 |
| Number of pages | 8 |
| ISBN (Print) | 0120449803 |
| State | Published - 1983 |
ASJC Scopus subject areas
- Engineering(all)