Abstract
An overview is given of the first demonstration of the large hydrogen/deuterium isotope effect and an optimized deuterium anneal process for manufacturing multi-level metal/dielectric MOS systems resulting in 50-100 fold improvement in channel hot carrier lifetime. The proposed deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 141-146 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3506 |
| DOIs | |
| State | Published - 1998 |
| Event | Microelectronic Device Technology II - Santa Clara, CA, United States Duration: Sep 23 1998 → Sep 24 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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