Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

I. C. Kizilyalli, G. Abeln, Z. Chen, G. Weber, F. Register, E. Harris, S. Chetlur, G. Higashi, M. Schofieled, S. Sen, B. Kotzias, P. K. Roy, J. Lyding, K. Hess

Research output: Contribution to journalConference article

Abstract

An overview is given of the first demonstration of the large hydrogen/deuterium isotope effect and an optimized deuterium anneal process for manufacturing multi-level metal/dielectric MOS systems resulting in 50-100 fold improvement in channel hot carrier lifetime. The proposed deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.

Original languageEnglish (US)
Pages (from-to)141-146
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3506
DOIs
StatePublished - Dec 1 1998
EventMicroelectronic Device Technology II - Santa Clara, CA, United States
Duration: Sep 23 1998Sep 24 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Kizilyalli, I. C., Abeln, G., Chen, Z., Weber, G., Register, F., Harris, E., Chetlur, S., Higashi, G., Schofieled, M., Sen, S., Kotzias, B., Roy, P. K., Lyding, J., & Hess, K. (1998). Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability. Proceedings of SPIE - The International Society for Optical Engineering, 3506, 141-146. https://doi.org/10.1117/12.323960